Thermal comparison of long-wavelength vertical-cavitysurface-emitting laser diodes
- 26 May 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (11) , 866-868
- https://doi.org/10.1049/el:19940589
Abstract
Heat flow finite element analysis is applied to basic device concepts, including planar structures with InGaAsP/InP or AlAs/GaAs substrate side mirrors (mounted top-up or top-down) and etched-well lasers with Si/SiO2 dielectric mirrors. In several cases, the calculated thermal resistance values are higher than with short-wavelength devices, but wafer-fused structures on GaAs substrate show clear thermal advantages.Keywords
This publication has 7 references indexed in Scilit:
- Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layerIEEE Photonics Technology Letters, 1994
- Modeling thermal effects on the light vs. current characteristic of gain-guided vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1994
- High temperature photopumping of 1.55 μm vertical cavity surface emitting lasersElectronics Letters, 1993
- Effective thermal conductivity analysis of 1.55 μm InGaAsP/InP vertical-cavity top-surface-emitting microlasersElectronics Letters, 1993
- Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laserElectronics Letters, 1993
- 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substratesApplied Physics Letters, 1992
- Thermal properties of AlAs/GaAs superlatticesApplied Physics Letters, 1987