Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements
- 1 December 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (12) , 453-454
- https://doi.org/10.1109/75.251398
Abstract
An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance.Keywords
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