The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 112 (1) , 27-32
- https://doi.org/10.1016/0022-0248(91)90908-n
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasersApplied Physics Letters, 1990
- Low-threshold 1.5μm DFB laser grown by GSMBEElectronics Letters, 1989
- Thermodynamic analysis of molecular beam epitaxy of III–V semiconductorsJournal of Crystal Growth, 1986
- λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxyApplied Physics Letters, 1984
- Gas source molecular beam epitaxy of GaxIn1−xPyAs1−yJournal of Applied Physics, 1984
- InGaAsP photodiodesIEEE Transactions on Electron Devices, 1983
- Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substratesJournal of Crystal Growth, 1982
- Composition effects in the growth of Ga(In)AsyP1-y alloys by MBEJournal of Crystal Growth, 1980
- Molecular Beam Epitaxy of GaP and GaAs1-xPxJapanese Journal of Applied Physics, 1976
- GaAs, GaP, and GaAs[sub x]P[sub 1−x] Epitaxial Films Grown by Molecular Beam DepositionJournal of Vacuum Science and Technology, 1969