λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 330-332
- https://doi.org/10.1063/1.95258
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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- New current injection 1.5-μm wavelength GaxAlyIn1−x−yAs/InP double-heterostructure laser grown by molecular beam epitaxyApplied Physics Letters, 1983
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- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Performance of an improved InGaAsP ridge waveguide laser at 1.3 μmElectronics Letters, 1981
- Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH LasersJapanese Journal of Applied Physics, 1981