Optically pumped 1.55-μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy

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Abstract
We report the first successful realization of room‐temperature laser action at a wavelength of 1.55 μm in a new double heterostructure in which the active layer of GaxAlyIn1−x−yAs is confined between two cladding layers of AluIn1−uAs. The structure was grown on InP by molecular beam epitaxy, and was pumped optically by a Q‐switched yttrium aluminum garnet laser. Peak output power of up to 5 W was obtained at an incident power corresponding to four times that required for threshold without catastrophic degradation. Temperature dependence of the threshold power can be characterized by Pth∼exp(T/T0) with T0=60 °C for 20 °C≤T≤100 °C.