Photonic Integrated Circuit Combining Two GaAs Distributed Bragg Reflector Laser Diodes for Generation of the Beat Signal
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2B) , L183
- https://doi.org/10.1143/jjap.31.l183
Abstract
We have fabricated a photonic integrated circuit (PIC) that had two GaAs distributed Bragg reflector (DBR) laser diodes (LD) and a Y-branch coupler integrated by means of the compositional disordering of a quantum well. Using this PIC as an optical heterodyne sweeper, frequency characteristics of a GaAs Schottky photodiode were measured.Keywords
This publication has 6 references indexed in Scilit:
- Fabrication and characteristics of GaAs-AlGaAs tunable laser diodes with DBR and phase-control sections integrated by compositional disordering of a quantum wellIEEE Journal of Quantum Electronics, 1991
- GaAs/AlGaAs GRIN-SCH-SQW DBR Laser Diodes with Passive Waveguides Integrated by Compositional Disordering of the Quantum Well Using Ion ImplantationJapanese Journal of Applied Physics, 1990
- GaInAs/GaInAsP multiple-quantum-well integrated heterodyne receiverElectronics Letters, 1989
- Monolithic integrated coherent receiver on InP substrateIEEE Photonics Technology Letters, 1989
- A Novel GRIN-SCH-SQW Laser Diode Monolithically Integrated with Low-Loss Passive WaveguidesJapanese Journal of Applied Physics, 1989
- Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiersApplied Physics Letters, 1989