GaAs/AlGaAs GRIN-SCH-SQW DBR Laser Diodes with Passive Waveguides Integrated by Compositional Disordering of the Quantum Well Using Ion Implantation

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Abstract
GaAs/AlGaAs GRIN-SCH-SQW DBR laser diodes are fabricated by ion implantation and two-step MOVPE growth. Passive waveguides are monolithically integrated by compositional disordering of quantum well heterostructures using silicon ion implantation. Waveguide losses of partially disordered GRIN-SCH-SQW passive waveguides are measured, and propagation losses as low as 4.4 cm-1 are observed at the lasing wavelength. Stable single mode operation is obtained, and the narrowest linewidth achieved is 840 kHz. The results show that this fabrication process is useful for photonic integrated circuits.