Sub-MHz Linewidth GaAs/AlGaAs GRIN-SCH-SQW DFB Laser Diodes with First-Order Gratings Fabricated by Electron Beam Lithography
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2216
- https://doi.org/10.1143/jjap.28.l2216
Abstract
Narrow-linewidth GaAs/AlGaAs GRIN-SCH-SQW DFB laser diodes with first-order gratings are reported. The first-order gratings and the GRIN-SCH-SQW structures were fabricated using electron beam lithography and MOVPE. The narrowest linewidth achieved is 730 kHz for a 1 mm cavity length. We also report on problems with gratings fabricated by electron beam lithography.Keywords
This publication has 15 references indexed in Scilit:
- A Novel GRIN-SCH-SQW Laser Diode Monolithically Integrated with Low-Loss Passive WaveguidesJapanese Journal of Applied Physics, 1989
- Spectral linewidth reduction (580 kHz) in structure-optimised 1.5 μm butt-jointed distributed Bragg reflector lasersElectronics Letters, 1989
- Sub-MHz spectral linewidth in 1.5μm separate-confinementheterostructure (SCH) quantum-well DFB LDsElectronics Letters, 1989
- Narrow-linewidth AlGaAs/GaAs multiple quantum well distributed feedback lasersElectronics Letters, 1989
- Extremely narrow linewidth (~1 MHz) and high-power DFB lasers grown by MOVPEElectronics Letters, 1989
- Highly coherent long cavity GaAs/AlGaAs single quantum-well lasersIEEE Journal of Quantum Electronics, 1989
- Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well LasersJapanese Journal of Applied Physics, 1985
- Measurements of the semiconductor laser linewidth broadening factorElectronics Letters, 1983
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Coupled-Wave Theory of Distributed Feedback LasersJournal of Applied Physics, 1972