Amorphous Silicon Superlattice Thin Film Transistors
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A) , L111
- https://doi.org/10.1143/jjap.26.l111
Abstract
A new type of thin film transistor (TFT) has been fabricated using hydrogenated amorphous silicon (a-Si:H)/silicon nitride (a-Si1-x N x :H) multilayer structures. The field effect mobility of the superlattice TFT was 0.74 cm2/Vs, while that of an a-Si:H TFT with the active layer produced by the same deposition conditions as the superlattice was 0.13 cm2/Vs. The increase in the field effect mobility for the superlattice was interpreted in terms of the quantum size effects in the a-Si:H potential well.Keywords
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