Real-time stress evolution during growth of InxAl1−xAs/GaAs metamorphic buffer layers
- 1 May 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 22 (3) , 1539-1543
- https://doi.org/10.1116/1.1669622
Abstract
Real-time stress measurements during growth of both linearly and step-graded metamorphic buffer layers are presented. We show that in situ stress monitoring provides information about the evolution of the film stress and surface lattice parameter, the kinetics of which cannot be fully studied using ex situ analysis. This technique may be used to help optimize the design of metamorphic buffer layers.
Keywords
This publication has 6 references indexed in Scilit:
- Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layersJournal of Applied Physics, 1999
- InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsJournal of Crystal Growth, 1999
- Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregationJournal of Electronic Materials, 1997
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909