Determination of the interband and the free carrier absorption constants in silicon at high-level photoinjection
- 14 March 1979
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 12 (3) , 425-436
- https://doi.org/10.1088/0022-3727/12/3/012
Abstract
Describes and experimental method together with an analysis of the experimental data, which makes it possible to determine the interband absorption coefficient, the free carrier absorption cross-section and the surface reflectivity in the same experimental set-up. The experiments were performed on samples of pure silicon at T=294K using a pulsed Nd-YAG laser, which gave pulses of 10-15 ns duration at lambda =1.06 mu m. The maximum carrier concentration achieved was about 3*1019 cm-3. Effects of laser beam inhomogeneities are also discussed and included in the absorption model.Keywords
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