Room-temperature pulsed operation of strained GaInNAs/GaAsdoublequantum well laser diode grown by metal organic chemical vapourdeposition
- 23 July 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (15) , 1495-1497
- https://doi.org/10.1049/el:19981034
Abstract
A strained GaInNAs/GaAs double quantum-well laser is developed by metal organic chemical vapour deposition. Almost 1.2 µm at room-temperature under pulsed operation is demonstrated. The threshold current density is lower than that of a laser with a GaInNAs bulk active layer.Keywords
This publication has 5 references indexed in Scilit:
- 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasersIEEE Photonics Technology Letters, 1998
- Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diodeElectronics Letters, 1997
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of GaInNAs/GaAslaser diodeElectronics Letters, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996