Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs
- 1 April 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 129 (3-4) , 375-384
- https://doi.org/10.1016/0022-0248(93)90470-h
Abstract
No abstract availableKeywords
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