Dislocation multiplication in GaAs : inhibition by doping
- 1 January 1989
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 24 (8) , 779-793
- https://doi.org/10.1051/rphysap:01989002408077900
Abstract
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals is related to the thermoelastic modelling of stresses during growth. The dislocation structure in as-grown and annealed crystals is deduced, in particular with the help of the results of plastic deformation. The addition of various elements of the columns II-III-IV-V-VI in GaAs is considered and its influence on the establishment of the dislocation substructure is discussedKeywords
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