Silicon and indium doping of GaAs: Measurements of the effect of doping on mechanical behavior and relation with dislocation formation
- 1 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (1-2) , 275-281
- https://doi.org/10.1016/0022-0248(87)90235-1
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Critical resolved shear stress measurements for silicon-doped GaAs single crystalsApplied Physics Letters, 1987
- High-temperature hardness of Ga1−xInxAsJournal of Applied Physics, 1986
- High-Temperature Mechanical Properties of GaAs Single Crystals: Effect of In “Doping” and of EnvironmentEurophysics Letters, 1986
- Measurements of the critical resolved shear stress for indium-doped and undoped GaAs single crystalsApplied Physics Letters, 1986
- Effects of indium lattice hardening upon the growth and structural properties of large-diameter, semi-insulating GaAs crystalsApplied Physics Letters, 1986
- Indentation plasticity and polarity of hardness on {111} faces of GaAsPhilosophical Magazine Part B, 1985
- Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystalsApplied Physics Letters, 1982
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- A method for finding critical stresses of dislocation movementApplied Physics Letters, 1977
- Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or ZnJournal of the American Ceramic Society, 1975