Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers
- 18 September 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (12) , 121112
- https://doi.org/10.1063/1.2355476
Abstract
The laser emission characteristics of a GaN-based vertical-cavity surface-emitting laser with two dielectric distributed Bragg reflectors were investigated under optically pumped operation at room temperature. The laser emitted wavelength at with an emission linewidth of and threshold pumping energy of . The laser has a high characteristic temperature of about and high spontaneous emission coupling factor of . The laser emission showed single and multiple spot emission patterns with spectral and spatial variations under different pumping conditions.
Keywords
This publication has 12 references indexed in Scilit:
- Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-OffJapanese Journal of Applied Physics, 2006
- Confocal microphotoluminescence of InGaN-based light-emitting diodesJournal of Applied Physics, 2005
- Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflectorApplied Physics Letters, 2005
- High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxySemiconductor Science and Technology, 2005
- Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectorsApplied Physics Letters, 2003
- Observation of enhanced spontaneous emission coupling factor in nitride-based vertical-cavity surface-emitting laserApplied Physics Letters, 2002
- Near ultraviolet optically pumped vertical cavitylaserElectronics Letters, 2000
- A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laserApplied Physics Letters, 2000
- Room Temperature Lasing at Blue Wavelengths in Gallium Nitride MicrocavitiesScience, 1999
- The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammoniaMRS Internet Journal of Nitride Semiconductor Research, 1999