Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

Lasing action is achieved in InGaN vertical-cavity surface-emitting lasers (VCSELs) with dielectric distributed Bragg reflectors (DBRs). We fabricated III-nitride VCSELs by removing a SiC substrate from a III-nitride cavity with a dry etching technique and then wafer bonding the cavity and ${\mathrm{SiO}}_2/{\mathrm{ZrO}}_2$ DBRs. These VCSELs have a high quality factor of 460 and a spontaneous emission factor of ${10}^{\text{−2}}.$ We observed lasing at a wavelength of 401 nm at room temperature with optical pumping. This lasing action was demonstrated at a low threshold of 5.1 ${\mathrm{mJ/cm}}^2$ by using a high-quality crystalline cavity and quantum-well layers without surface roughening or cracking.