High resistivity layers of GaAs grown by liquid phase epitaxy
- 1 July 1975
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 7 (3) , 195-201
- https://doi.org/10.1007/bf00936024
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Gunn device gigabit rate digital microcircuitsIEEE Journal of Solid-State Circuits, 1975
- The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1973
- Semiconductor PhysicsPublished by Springer Nature ,1973
- Investigation of the Recombination and Trapping Processes of Photoinjected Carriers in Semi-Insulating Cr-Doped GaAs Using PME and PC MethodsJournal of Applied Physics, 1972
- Ionized Impurity Density in n-Type GaAsJournal of Applied Physics, 1970
- Arseniure de gallium dope au chrome obtenu par epitaxie en phase liquideMaterials Research Bulletin, 1969
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968