Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si
- 1 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3) , 254-256
- https://doi.org/10.1063/1.92703
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Raman measurements of temperature during cw laser heating of siliconJournal of Applied Physics, 1980
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- cw argon laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976