Monte carlo simulation of channeling effects near the axis in silicon
- 1 January 1985
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 87 (4) , 169-174
- https://doi.org/10.1080/01422448608209718
Abstract
Channeling effects in low-index crystallographic directions in Si near the axis are analysed with a Monte Carlo method. The theory is compared with the experimental results reported in literature.Keywords
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