Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1) , 101-111
- https://doi.org/10.1088/0268-1242/8/1/017
Abstract
Nondestructive optical methods, based on measurements of the 'plasma edge' and the Moss-Burstein shift, are investigated as contactless alternatives to Hall measurements for determining carrier concentrations. Infrared reflection and transmission spectra of undoped and Si-doped InAs grown on GaAs by MBE are studied. A curve-fitting procedure is developed to fit the reflectivity spectra with or without phonon-plasmon coupling. The range of carrier concentrations over which these optical methods can provide useful characterization is evaluated. The effective mass determined from 'plasma edge' measurements agrees well with the simple Kane model for n below 2.7*1019 cm-3. For n above 4*1019 cm-3, the sample effective mass deviates considerably from the simple Kane model. Excitonic structure in the absorption edge is reported for high-purity undoped samples.Keywords
This publication has 31 references indexed in Scilit:
- Raman scattering by plasmon-phonon modes in highly doped n-InAs grown by molecular beam epitaxySemiconductor Science and Technology, 1992
- Observation of spatial dispersion of surface plasmon mode in HREELS of heavily doped n-type InAs(001)Surface Science, 1992
- InSb-based materials for detectorsSemiconductor Science and Technology, 1991
- Origin of two distinct surface optical phonon modes on an n-type polar semiconductor surfaceSurface Science, 1990
- MBE growth and quantum transport measurements of spike-doped InSb and InAsSemiconductor Science and Technology, 1990
- Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxySemiconductor Science and Technology, 1989
- Theoretical analyses of eels from an n-type InSb surfaceSurface Science, 1987
- The morphology and electrical properties of heteroepitaxial InAs prepared by MBEApplied Physics A, 1984
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954