Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxy
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 303-308
- https://doi.org/10.1088/0268-1242/4/4/038
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxyApplied Physics Letters, 1988
- Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- Photoluminescence and the band structure of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- Demonstration of an InAsSb strained-layer superlattice photodiodeApplied Physics Letters, 1988
- Long-wavelength photoluminescence of InAs1−xSbx (0<x<1) grown by molecular beam epitaxy on (100) InAsApplied Physics Letters, 1988
- Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxyApplied Physics Letters, 1987
- I n s i t u contacts to GaAs based on InAsApplied Physics Letters, 1986
- The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVDJournal of Crystal Growth, 1986
- Heteroepitaxial InSb Films Grown by Molecular Beam EpitaxyPhysica Status Solidi (a), 1979
- Molecular Beam Epitaxy of InxGa1-xSb (0≦x≦1)Japanese Journal of Applied Physics, 1979