I n s i t u contacts to GaAs based on InAs
- 1 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (22) , 1545-1547
- https://doi.org/10.1063/1.97277
Abstract
We report preliminary electrical results on n+‐InAs/n‐GaAs contact structures grown by molecular beam epitaxy. The data indicate that the conduction‐band discontinuity is sufficiently small to allow the formation of an ohmic contact to n‐type GaAs for very heavily doped InAs layers. The structures require a short‐term anneal to obtain a low resistance contact. An InAs layer which is only 200 Å thick is sufficient to provide a specific contact resistance of 10−6 Ω cm2. The contacts appear to be thermally stable for short‐term anneals up to 900 °C.Keywords
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