Wide-band monolithic GaAs convolver and memory correlator

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Abstract
Experimental results for a monolithic GaAs convolver and memory correlator of time bandwidth 660 are reported. The device was fabricated on a semi-insulating GaAs substrate and ion implantation was used to define the 5.5-μs-long Schottky diode region. The interdigital transducers were chirped to provide a 120-MHz bandwidth at a center frequency of 300 MHz. With an untuned two-port insertion loss of 67.6 dB, an external convolution efficiency of –107 dBm and an external memory correlation efficiency of –120 dBm were obtained. Convolution and memory correlation with a 95-MHz chipping rate, 511 chip long, spread spectrum waveform are also demonstrated.