Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates
- 1 July 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (7) , 653-660
- https://doi.org/10.1016/0038-1101(68)90067-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- Chemical vapour deposition promoted by r.f. dischargeSolid-State Electronics, 1965