Graphoepitaxy of Ge Films on SiO2 by Zone Melting Recrystallization
- 1 October 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (10A) , L636
- https://doi.org/10.1143/jjap.21.l636
Abstract
Graphoepitaxy of vacuum-evaporated Ge films on amorphous fused quartz or thermally grown SiO2 substrates with surface-relief gratings engraved by reactive ion etching has been performed by a heating process of zone melting. We observed that zone melted films on gratings consisted of grains of 2–10 µm size with direction parallel to the grating axis and perpendicular to the substrate plane.Keywords
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