Liquidphasen-Epitaxie von Si-dotiertem AlxGa1−xAs
- 1 January 1977
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 12 (2) , 127-134
- https://doi.org/10.1002/crat.19770120206
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Spektrochemische Bestimmung von Silizium in AlxGa1–xAs und physikalische Eigenschaften der KristalleCrystal Research and Technology, 1977
- Mott transition in multivalley semiconductorsPhysical Review B, 1975
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Calculation of the Liquidus Isotherms and Component Activities in the Ga-As-Si and Ga-P-Si Ternary SystemsJournal of the Electrochemical Society, 1974
- Electrical properties of n-type AlxGa1–xAs single crystalsPhysica Status Solidi (a), 1973
- Liquid-liquid equilibria and Gibbs energy of mixing for binary systemsScripta Metallurgica, 1972
- Solidus Boundary in the InAs-AlAs Pseudobinary SystemJournal of the Electrochemical Society, 1971
- Photo and cathodoluminescence in vapor-grown AlAsSolid State Communications, 1970
- Hall-Effect Measurements of n-Type Gallium PhosphideJournal of Applied Physics, 1965
- Die Zustandsbilder Gallium—Wismut und Gallium—Quecksilber, Vergleich der Koexistenzkurven mit den Theorien der EntmischungZeitschrift für Physikalische Chemie, 1960