Current-controlled negative resistance in CdSnP2
- 1 August 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (8) , 3422-3424
- https://doi.org/10.1063/1.1661731
Abstract
Coherent current oscillations are observed at room temperature under pulsed bias in the chalcopyrite-structure compound CdSnP2. The properties of this negative resistance suggest that it is due to the intervalley transfer of carriers (Gunn effect). Carrier concentration inhomogeneities in the available material, grown by a solution process, remain as the central experimental difficulty.This publication has 15 references indexed in Scilit:
- The CdP2-Sn system and some properties of CdSnP2 crystalsMaterials Research Bulletin, 1971
- Energy band structure and optical properties of CdSnP2Physica Status Solidi (a), 1971
- Electroreflectance of CdSnP2Physics Letters A, 1970
- Negative Crystal-Field Splitting of the Valence Bands in CdSnPhysical Review Letters, 1970
- On some properties of CdSnP2 in strong electric fieldPhysics Letters A, 1970
- Geometrical magnetoresistance and hall mobility in gunn effect devicesSolid-State Electronics, 1970
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961
- Zur transversalen magnetischen Widerstandsänderung von InSbThe European Physical Journal A, 1954