Shallow-acceptor spectral-line fine structure in germanium
- 15 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (8) , 5148-5156
- https://doi.org/10.1103/physrevb.48.5148
Abstract
A controlled-accuracy, high-resolution energy spectrum of the 4×4 Kohn-Luttinger Hamiltonian with a screened Coulomb impurity potential has been obtained. The calculated and measured spectra were adjusted using selected line positions. An identification of the boron spectrum reveals a complex structure for most of the lines. The identification yields the splittings in the multiplets and chemical shifts of the odd-parity excited states. An estimated splitting in the C triplet of 53 μeV is in fair agreement with the reported separation for Ge(B), Ge(Al), and Ge(In). New data on the spectroscopic values of the ground-state binding energies for nine experimentally studied acceptors are presented.Keywords
This publication has 17 references indexed in Scilit:
- Prediction of line intensities and interpretation of acceptor spectra in semiconductorsSolid State Communications, 1988
- Central cell effects on acceptor spectra in Si and GeSolid State Communications, 1980
- Interpretation of acceptor spectra in semiconductorsSolid State Communications, 1978
- Far infrared photoconductivity from majority and minority impurities in high purity Si and GeSolid State Communications, 1974
- High resolution fourier transform spectroscopy of shallow acceptors in ultra-pure germaniumSolid State Communications, 1974
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Excitation spectra of group III impurities in germaniumJournal of Physics and Chemistry of Solids, 1965
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955