A low on-resistance, high-current GaAs power VFET
- 1 April 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (4) , 142-144
- https://doi.org/10.1109/55.372495
Abstract
We have developed a new fabrication process for GaAs VFETs that results in excellent performance in a 10 A prototype designed for switching in low voltage synchronous rectifier applications. The new fabrication process uses a buried carbon-doped GaAs gate structure for the gate electrodes and an epitaxial overgrowth step. We have demonstrated 10 A devices with 3.5 cm of gate width and 1.5 mohm of on-resistance (specific on-resistance of 84 μohm-cm 2 ). The device required a 0.5 μm channel etched between 0.5 μm gates placing stringent requirements on the gate side wall etch profile and epitaxial doping uniformity.Keywords
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