Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)
- 7 July 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (3) , 444-446
- https://doi.org/10.1063/1.127004
Abstract
GaN metal–semiconductor–metal photoconductive detectors have been fabricated on Si(111) substrates. The GaN epitaxial layers were grown on Si substrates by means of metalorganic chemical-vapor deposition. These detectors exhibited a sharp cutoff at the wavelength of 363 nm and a high responsivity at a wavelength from 360 to 250 nm. A maximum responsivity of 6.9 A/W was achieved at 357 nm with a 5 V bias. The relationship between the responsivity and the bias voltage was measured. The responsivity saturated when the bias voltage reached 5 V. The response time of 4.8 ms was determined by the measurements of photocurrent versus modulation frequency.Keywords
This publication has 20 references indexed in Scilit:
- Single-crystal GaN pyramids grown on (111)Si substrates by selective lateral overgrowthJournal of Crystal Growth, 1999
- High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaNApplied Physics Letters, 1999
- High-quality visible-blind AlGaN p-i-n photodiodesApplied Physics Letters, 1999
- High-performance GaN p-n junction photodetectors for solar ultraviolet applicationsSemiconductor Science and Technology, 1998
- Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noiseApplied Physics Letters, 1998
- Low noise p-π-n GaN ultraviolet photodetectorsApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectorsJournal of Crystal Growth, 1997
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Perspective On Gallium NitrideMRS Proceedings, 1989