Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
- 3 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (5) , 641-643
- https://doi.org/10.1063/1.121933
Abstract
The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property.Keywords
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