Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces
- 28 August 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 85 (9) , 1902-1905
- https://doi.org/10.1103/physrevlett.85.1902
Abstract
InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relative weakness of the In-N bond compared to Ga-N. Theory indicates that In will preferentially bind at the edges and interior of the structures, thereby giving rise to an inhomogeneous In distribution at the surface.Keywords
This publication has 11 references indexed in Scilit:
- Indium-induced changes in GaN(0001) surface morphologyPhysical Review B, 1999
- Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)Journal of Vacuum Science & Technology A, 1999
- Surface energetics, pit formation, and chemical ordering in InGaN alloysApplied Physics Letters, 1999
- Identifying the forces responsible for self-organization of nanostructures at crystal surfacesNature, 1999
- Phase separation in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- Alloy decomposition and surface instabilities in thin filmsPhysical Review B, 1998
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Stability of periodic domain structures in a two-dimensional dipolar modelPhysical Review B, 1995
- Evolution of surface morphology and strain during SiGe epitaxyThin Solid Films, 1992
- On the stability of surfaces of stressed solidsActa Metallurgica, 1989