Electrical properties of TiO2 films deposited by a reactive-ionized cluster beam
- 15 January 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (2) , 619-623
- https://doi.org/10.1063/1.343093
Abstract
Titanium dioxide films of 100–450‐nm thickness were deposited on fused quartz and silicon substrates heated at 350 °C by a reactive‐ionized cluster‐beam deposition. After the deposition, films were annealed at 600 °C in dry O2 ambient. The electrical properties of TiO2 films and the TiO2‐Si interface were analyzed. The dielectric constant of the film after the annealing was in a range of 35–108, which depended on the deposition conditions. The films showed a high breakdown voltage and a sufficiently low interface‐state density of 1–2×1011 cm−2 eV−1 at the midgap.This publication has 12 references indexed in Scilit:
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