Optical band gap of the ternary semiconductor Si1−x−yGexCy
- 15 August 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (4) , 2470-2472
- https://doi.org/10.1063/1.349403
Abstract
Single‐crystal alloys of diamond with Si and Ge are investigated theoretically. An indirect band gap Γv25’ → Δc1 is found for the new semiconductor Si1−x−yGexCy over most compositions x and y, with an indirect Γv25’ → Lc1 gap found for the remaining compositions. The estimated band gaps span the 0.62–5.5‐eV‐range. Predictions are made for band gap versus lattice parameter in the new alloy semiconductors Si1−xCx and Ge1−xCx.This publication has 5 references indexed in Scilit:
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