Charge Buildup in Magnetized Process Plasma

1 July 1991

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 30 (7R) , 1576-1580
https://doi.org/10.1143/jjap.30.1576

Abstract

The charge buildup in a magnetron etcher has been studied experimentally for two different magnet arrangements and theoretically on the basis of an equivalent circuit model. Wafer charging measured with a metal-Si₃N₄-SiO₂-Si (MNOS) capacitor is negative along the centerline of the magnet poles and positive between the magnets in both cases. Wafer charging is explained either by curtent crowding at the center of the magnet poles or by the nonambipolar diffusion effect.

Keywords

EQUIVALENT CIRCUIT

This publication has 1 reference indexed in Scilit:

Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher
Japanese Journal of Applied Physics, 1990