Cathodoluminescence study of substrate offset effects on interface step structures of quantum wells
- 30 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (5) , 436-438
- https://doi.org/10.1063/1.100944
Abstract
The interface structures of single quantum wells grown on vicinal (100) substrates with a controlled offset 0.2° are studied by cathodoluminescence microscopy. Bright and dark stripe patterns are periodically observed in monochromatic images of the single quantum wells and the stripes replicate stair‐like stepped interfaces. It is further shown that the observed terrace width is several times larger than the average interstep distance of monolayer steps calculated from the offset angle and that the step height is not one monolayer. Based on the results, a new interface structure model has been proposed that takes the offset angle into account. Finally, it is shown that employing growth interruption during epitaxial growth as an interface smoothing technique has limitations.Keywords
This publication has 6 references indexed in Scilit:
- A High Resolution Cathodoluminescence Microscopy Utilizing Magnetic FieldJapanese Journal of Applied Physics, 1988
- Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfacesJournal of Vacuum Science & Technology B, 1987
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981