Optimization of the Deposition Conditions for High-Gap a-Si,Ge:H,F Alloys
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- What can we learn from the saturation of light-induced defects in amorphous hydrogenated silicon?Solar Cells, 1991
- Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous siliconApplied Physics Letters, 1990
- Saturation of the light-induced defect density in hydrogenated amorphous siliconApplied Physics Letters, 1989
- Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactorJournal of Vacuum Science & Technology A, 1986