SiO2 Film Deposition by KrF Excimer Laser Irradiation
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A) , L87
- https://doi.org/10.1143/jjap.25.l87
Abstract
Deposition of SiO2 on a Si substrate by irradiating SiH4–O2–N2 mixture gas with focused KrF excimer laser (wavelength: 249 nm) was carried out. The deposition rate was 300Å /min at a substrate temperature of 250°C. The deposition strongly depends on the substrate temperature, laser power and flow ratio of O2/SiH4, and these parameters have individual threshold values for the film deposition. Photo-initiation phenomena in SiO2 deposition are observed for the first time. The deposited film was evaluated by etching and infrared measurements together with electrical measurements.Keywords
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