Setback modulation doping of HgTe-CdTe multiple quantum wells
- 4 May 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18) , 2282-2284
- https://doi.org/10.1063/1.107055
Abstract
Photoassisted molecular beam epitaxy has been used to achieve the first setback modulation doping of HgTe-CdTe heterostructures. A 43 Å setback is found to yield a factor-of-2 increase of the mobility over any measured previously for intentionally doped samples, and an 81 Å setback leads to further enhancement of the mobility.Keywords
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