Room-temperature Al single-electron transistor made by electron-beam lithography
- 17 April 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (16) , 2256-2258
- https://doi.org/10.1063/1.126313
Abstract
We present a lithographically made Al single-electron transistor that shows gate modulation at room temperature. The temperature dependence of the modulation agrees with the orthodox theory, however, energy-level quantization in a tiny metallic island affects the device characteristics below 30 K. The charge-equivalent noise of the device at 300 K was measured to be ∼4×10 −2 e/ Hz 1/2 at 1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies.Keywords
This publication has 6 references indexed in Scilit:
- Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperatureApplied Physics Letters, 1998
- Gate-Voltage Studies of Discrete Electronic States in Aluminum NanoparticlesPhysical Review Letters, 1997
- 100-K Operation of Al-Based Single-Electron TransistorsJapanese Journal of Applied Physics, 1996
- Fabrication technique for Si single-electron transistoroperating at room temperatureElectronics Letters, 1995
- Observation of single-electron charging effects in small tunnel junctionsPhysical Review Letters, 1987
- Quantum size effects in metal particlesReviews of Modern Physics, 1986