Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature
- 13 April 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (15) , 1893-1895
- https://doi.org/10.1063/1.121218
Abstract
We have reported the single-electron charging effects in Nb/Nb oxide-based single-electron transistors (SETs) at room temperature K). The SETs were first fabricated by a scanning probe microscope based anodic oxidation. Then, the miniaturization of tunnel junctions was performed by thermal oxidation. Ultra-low-capacitance tunnel junctions were easily obtained by utilizing both kinds of oxidation processes, which realizes room-temperature Nb-based SETs.
Keywords
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