Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process

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Abstract
An atomic force microscope (AFM)-based anodic oxidation technique, which is based on selective oxidation of metal thin film by anodization, was developed for the fabrication of niobium (Nb)/Nb oxide-based ultra-small tunnel junction devices. Double junction devices without any gate structures and double junction SETs with side-gate structure were fabricated using this technique, and single-electron charging effects were clearly observed at 100 K.