A radiant heated reactor with multistep process capability
- 1 August 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 25 (2-4) , 147-152
- https://doi.org/10.1016/0167-9317(94)90010-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- 300° C Processing of Si Using Remote Plasma Techniques for In Situ Cleaning, Epitaxy, and Oxide/Nitride/Oxide DepositionsMRS Proceedings, 1989
- IIIB-3 Limited reaction processing: In-situ epitaxial silicon thin-oxide polysilicon layers for MOS transistorsIEEE Transactions on Electron Devices, 1986