300° C Processing of Si Using Remote Plasma Techniques for In Situ Cleaning, Epitaxy, and Oxide/Nitride/Oxide Depositions
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Gating of germanium surfaces using pseudomorphic silicon interlayersApplied Physics Letters, 1988
- Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfacesJournal of Applied Physics, 1988
- Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1988
- Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge filmsJournal of Applied Physics, 1986
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- Indirect plasma deposition of silicon dioxideJournal of Vacuum Science and Technology, 1982