Formation of Highly Mobile Defects in GaAs Under Ar-Plasma Etching

Publisher Website

16 July 1990

journal article
research article
Published by Wiley in Physica Status Solidi (a)

Vol. 120 (1) , 77-81
https://doi.org/10.1002/pssa.2211200105

Abstract

No abstract available

Keywords

PLASMA ETCHING

This publication has 4 references indexed in Scilit:

Plasma Stimulated Impurity Redistribution in Silicon
Physica Status Solidi (a), 1989
Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of Si
Journal of the Electrochemical Society, 1985
Surface Damage on Si Substrates Caused by Reactive Sputter Etching
Japanese Journal of Applied Physics, 1981
Identification of the defect state associated with a gallium vacancy in GaAs and ${Al}_{x} {Ga}_{1 - x} As$
Physical Review B, 1977