Growth of high-quality InN using low-temperature intermediate layers by RF-MBE
- 18 December 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 1017-1021
- https://doi.org/10.1016/s0022-0248(01)02119-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Transient electron transport in wurtzite GaN, InN, and AlNJournal of Applied Physics, 1999
- Progress and prospects of group-III nitride semiconductorsProgress in Quantum Electronics, 1996
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Thermal stability of indium nitride at elevated temperatures and nitrogen pressuresMaterials Research Bulletin, 1970