Measurements of deep levels in high-purity molecular beam epitaxial GaAs
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5287-5289
- https://doi.org/10.1063/1.334843
Abstract
Constant capacitance deep‐level transient spectroscopy measurements are performed on molecular beam epitaxially grown GaAs layers with net carrier concentrations of 3.3–6.5×1014 cm−3. Four trap levels are detected, three of which are usually detected in molecular beam epitaxial layers, and the fourth, a very shallow trap at 30 meV, has not been previously reported. Determination of the concentrations for this new level dispute the accepted interpretation of Hall measurements near and above room temperature.This publication has 7 references indexed in Scilit:
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