Microscopic study of the surfactant-assisted Si, Ge epitaxial growth
- 9 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (19) , 2347-2349
- https://doi.org/10.1063/1.108239
Abstract
The Sb‐assisted Si, Ge epitaxial growth processes have been studied using high resolution photoemission. It is found that the initially ordered Sb monolayer on the Si(100) and Ge(100) surfaces occupies the epitaxial sites and fully saturates the surface dangling bonds. This results in a reduction of the surface energy. During the growth process, the Sb atoms and the deposited Si, Ge atoms change their positions. Sb atoms segregate to the growth front to form a new ordered layer while leaving the uniform epitaxial Si, Ge layer behind.Keywords
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