Si–H Bonds on the 6H–SiC(0001) Surface after H2 Annealing
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6A) , L699
- https://doi.org/10.1143/jjap.36.l699
Abstract
The Si–H bonds on the 6H–SiC(0001) on-axis surface were investigated using Fourier-transformed infrared attenuated total reflection (FTIR-ATR). The clear absorption bands of the Si–H stretching vibrations were observed from the 6H–SiC(0001) on-axis surface after H2 annealing. The configuration of the Si–H bonds on the surface was discussed from the polarized spectra, the chemical characteristics and the electronegativities of the atoms bonded to the Si. The FTIR-ATR spectra suggested that the 6H–SiC(0001) on-axis surface after H2 annealing at 1000° C was primarily terminated by silicon monohydride with high regularity.Keywords
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